Flash memory device capable of improving reliability

摘要

A flash memory device includes a memory cell array having a first region and a second region that include memory cells arranged in a plurality of rows and columns; an address storage circuit adapted to store address information for defining the second region; a row decoder circuit adapted to select one of the first and second regions in response to an external address; a voltage generating circuit adapted to generate a read voltage to be provided to a row of the selected region by the row decoder circuit during a read operation; a detecting circuit adapted to detect whether the selected region is included in the second region on the basis of address information and external address information that are stored in the address storage circuit; and a control logic adapted to control the voltage generating circuit in response to an output of the detecting circuit during the read operation. The control logic controls the voltage generating circuit so that a read voltage provided to the row of the second region is lower than a read voltage provided to a row of the first region.