METHOD OF FORMING A CONTACT PLUG IN SEMICONDUCTOR DEVICE

摘要

A contact plug forming method for semiconductor devices is provided to improve the step coverage of a sacrificing layer and to prevent the generation of a void. A contact plug forming method for semiconductor devices comprises the following steps. A semiconductor substrate including select lines is prepared. An SAC(self aligned contact) layer(114) is formed along the select lines and the surface of the semiconductor substrate. A sacrificing layer(116a) is formed on the SAC layer. The height of the SAC layer is lowered. The sacrificing layer is transformed to a sacrificial dielectric film. An interlayer insulating film(118) is formed on the sacrificial dielectric film and the SAC layer. A contact hole is formed between select lines. A contact plug(122) is formed inside the contact hole.