METHOD FOR MANUFCTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to produce a sacrificing film before forming an insulating film in order to prevent the deformation of the insulating film due to an oxidation process. A method for manufacturing a semiconductor device comprises the following steps. A substrate is selectively etched to form a trench(27) for a recess channel. A sacrificing film is formed on the surface of the trench. The sacrificing film is used up through an oxidation process. A gate insulating film(29) is formed on the surface of the trench in the oxidation process. A gate electrode(30) is formed on the gate insulating film. The gate electrode is formed by reclaiming the trench.