Apparatus for measuring semiconductor physical characteristics

摘要

A reflectometry method and apparatus for gathering meaningful reflectance data indicative of one or more characteristics of a substance being grown on a horizontal substrate within a reaction chamber. The apparatus includes an external light source which shines light into the chamber through an opening having a shutter for selectively permitting or preventing the light from passing in and out of the chamber through the opening. A detector receives light that reflects off the substance and exits the chamber through the opening. During operation, the substrate is rotated about an axis substantially normal to the growing plane within the reaction chamber to ensure uniform deposition of the substance thereon. The shutter momentarily opens in synchronicity with the speed of revolution of the substrate such that substantially the same discrete area of the growing substance is illuminated so as to eliminate the effects of precession on the measurements.