| 摘要 |
In a nonvolatile memory device and a method of fabricating the same, the nonvolatile memory device may include a semiconductor substrate having a device isolation layer defining an active region, a pair of nonvolatile memory transistors on the active region, a select transistor disposed between the pair of nonvolatile memory transistors, and floating diffusion regions on the active region between each of the nonvolatile memory transistors and the select transistor. The select transistor may include a gate insulation layer having a thickness and a material that are the same as those of gate insulation layers of the nonvolatile memory transistors. The resulting nonvolatile memory device may include a memory cell unit that includes the pair of nonvolatile memory transistors and the select transistor.
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