发明名称 Overlay target for polarized light lithography
摘要 A target and method for use in polarized light lithography. A preferred embodiment comprises a first structure located on a reference layer, wherein the first structure is visible through a second layer, and a second structure located on the second layer, wherein the second structure is formed from a photomask containing a plurality of sub-structures oriented in a first orientation, wherein a polarized light is used to pattern the second structure onto the second layer, and wherein a polarization of the polarized light is the same as the orientation of the plurality of sub-structures. The position, size, and shape of the second structure is dependent upon a polarity of the polarized light, permitting a single design for an overlay target to be used with different polarities of polarized light.
申请公布号 US7556898(B2) 申请公布日期 2009.07.07
申请号 US20050218417 申请日期 2005.09.01
申请人 INFINEON TECHNOLOGIES AG 发明人 MAROKKEY SAJAN
分类号 G03C5/00;G03F9/00 主分类号 G03C5/00
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