| 发明名称 |
MOS transistor manufacturing |
| 摘要 |
A MOS transistor made in monolithic form, vias contacting the gate and the source and drain regions of the transistor being formed on the other side of the channel region with respect to the gate.
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| 申请公布号 |
US7556995(B2) |
申请公布日期 |
2009.07.07 |
| 申请号 |
US20060604462 |
申请日期 |
2006.11.27 |
| 申请人 |
STMICROELECTRONICS CROLLES 2 SAS;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
CORONEL PHILIPPE;GALLON CLAIRE;FENOUILLET-BERANGER CLAIRE |
| 分类号 |
H01L21/336;H01L21/3205 |
主分类号 |
H01L21/336 |
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