发明名称 Method of controlling the resistance in a variable resistive element and non-volatile semiconductor memory device
摘要 The method of controlling a resistance of a variable resistive element comprises a forming step for shifting the variable resistive element from an initial state after the production to a variable resistance state capable of a stable mono-polar switching action where a variable resistive characteristic of the variable resistive element is turned to a program resistive characteristic by applying a program voltage pulse to the variable resistive element for first pulse application time and to an erase resistive characteristic by applying an erase voltage pulse equal in polarity to the program voltage pulse to the variable resistive element for second pulse application time longer than the first pulse application time, wherein one or more forming voltage pulses equal in polarity to the program voltage pulse is applied to the variable resistive element for third pulse application time longer than the second pulse application time.
申请公布号 US7558099(B2) 申请公布日期 2009.07.07
申请号 US20070702109 申请日期 2007.02.05
申请人 SHARP KABUSHIKI KAISHA 发明人 MORIMOTO HIDENORI
分类号 G11C11/00 主分类号 G11C11/00
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