| 摘要 |
A semiconductor device and a fabricating method thereof are provided to form a third insulating layer on a second insulating layer in order to prevent stress from being generated between a first insulating layer pattern and a second insulating layer pattern in an annealing process. An active(AR) is protruded from a semiconductor substrate(100). An element isolating portion(FR) is arranged near the active. A first insulating layer pattern(108a) covers some of the element isolating portion to expose the top of the active. A second insulating layer pattern(110) is arranged on the first insulating layer pattern to expose the top of the active. A third insulating layer pattern(112a) is arranged on the second insulating layer pattern to cover the active. The first insulating layer pattern represents a spin-on dielectric film.
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