| 发明名称 |
Method of fabricating semiconductor device |
| 摘要 |
A semiconductor device has a resin package layer on a principal surface of a semiconductor chip, on which a number of bump electrodes are formed, wherein the semiconductor device has a chamfer surface or a stepped surface on a top edge part such that the external shock or stress applied to such an edge part is dissipated by the chamfer surface of the stepped surface.
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| 申请公布号 |
US7556985(B2) |
申请公布日期 |
2009.07.07 |
| 申请号 |
US20050249334 |
申请日期 |
2005.10.14 |
| 申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
FUKASAWA NORIO;MATSUKI HIROHISA;NAGASHIGE KENICHI;HAMANAKA YUZO;MORIOKA MUNEHARU |
| 分类号 |
H01L21/00;H01L23/28;H01L21/02;H01L21/301;H01L21/56;H01L21/60;H01L21/673;H01L23/00;H01L23/12;H01L23/31;H01L29/06 |
主分类号 |
H01L21/00 |
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