| 摘要 |
A semiconductor device comprises a first electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in order, a second electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in order and a semiconductor chip having a first electrode formed on a first surface of the semiconductor chip and a second electrode formed on a second surface of the semiconductor chip, the first electrode being formed on an opposite side of the second electrode. The semiconductor chip mounted on the first electrode-lead, the second electrode facing the first surface of the first electrode-lead. A first connection conductor is connected the first electrode of the semiconductor chip to the first surface of the second electrode-lead. The first electrode-lead, the second electrode-lead and the semiconductor chip are housed in a package. The second surface of the first electrode-lead and the second surface of the second electrode-lead are exposed at a surface of the package.
|
