| 摘要 |
A method for manufacturing a semiconductor device is provided to form an isotropic space in a landing plug contact of a bit line contact hole in order to increase a contact area between the bit line contact and the landing plug contact. A method for manufacturing a semiconductor device comprises the following steps of: preparing a landing plug contact(LPC) on a substrate; forming an interlayer insulating film on the landing plug contact; forming a bit line contact hole on the interlayer insulating film to open the landing plug contact; forming a spacer(38A) on the side of the bit line contact hole; forming an isotropic space(39) in the landing plug contact; and padding the isotropic space and the bit line contact hole to form a bit line contact(BLC).
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