| 摘要 |
A charge pumping circuit is provided to improve the layout and the peak current by reducing the number of charge pumps operating in DRAM at the same time. A charge pumping circuit comprises a high voltage sensor(20), a high voltage oscillator(22) and a plurality of high voltage pumps(24a,24b). The high voltage sensor senses the high voltage and outputs the control signal. The high voltage oscillator outputs the clock signal(OSC1,OSC2,OSC3) having the different phases according to the control signal of the high voltage sensor. The high voltage oscillator is controlled by the bank active control sign(LDVDL). A plurality of high voltage pumps is arranged in a plurality of regions with the dispersion. A pair of high voltage pumps is arranged in one region. One out of a pair of high voltage pumps receives the clock signal through an inverter.
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