发明名称 |
Passgate structures for use in low-voltage applications |
摘要 |
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
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申请公布号 |
US7557608(B2) |
申请公布日期 |
2009.07.07 |
申请号 |
US20060498214 |
申请日期 |
2006.08.01 |
申请人 |
ALTERA CORPORATION |
发明人 |
LEE ANDY L;CHANG WANLI;MCCLINTOCK CAMERON;TURNER JOHN E;JOHNSON BRIAN D;HWANG CHIAO KAI;CHANG RICHARD YEN-HSIANG;CLIFF RICHARD G |
分类号 |
H01L25/00;H03K17/06;H03K19/177 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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