摘要 |
A method for cutting an ingot into wafers by winding a wire around a plurality of grooved rollers and pressing the traveling wire against the ingot while supplying cutting slurry to the grooved rollers. Only during a period after the cutting depth of the ingot has reached at least 2/3 of the diameter before the cutting is ended, slurry for adjusting ingot temperature is supplied to the ingot independently from the cutting slurry while controlling the supply temperature and the ingot is cut while controlling the cooling rate at a cutting depth of 2/3 of the diameter or more. When the ingot is cut by using a wire saw, sudden cooling of the ingot is lessened in the vicinity of the end of cutting of the ingot, and as a result, a method for cutting a high quality wafer having a uniform thickness with suppressed occurrence of nano-topography is provided. |