发明名称 CUTTING METHOD
摘要 A method for cutting an ingot into wafers by winding a wire around a plurality of grooved rollers and pressing the traveling wire against the ingot while supplying cutting slurry to the grooved rollers. Only during a period after the cutting depth of the ingot has reached at least 2/3 of the diameter before the cutting is ended, slurry for adjusting ingot temperature is supplied to the ingot independently from the cutting slurry while controlling the supply temperature and the ingot is cut while controlling the cooling rate at a cutting depth of 2/3 of the diameter or more. When the ingot is cut by using a wire saw, sudden cooling of the ingot is lessened in the vicinity of the end of cutting of the ingot, and as a result, a method for cutting a high quality wafer having a uniform thickness with suppressed occurrence of nano-topography is provided.
申请公布号 KR20090074739(A) 申请公布日期 2009.07.07
申请号 KR20097005760 申请日期 2007.08.08
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 OISHI HIROSHI;NAKAMATA DAISUKE
分类号 B24B57/02;B24B27/06;B28D5/04;H01L21/304 主分类号 B24B57/02
代理机构 代理人
主权项
地址