| 摘要 |
A Junction Field-Effect transistor with no surface contact for the back gate and twice as much transconductance in the channel and with a higher switching speed is achieved by intentionally shorting the channel-well PN junction with the gate region. This is achieved by intentionally etching away field oxide outside the active area at least in the gate region so as to expose the sidewalls of the active area down to the channel-well PN junction or a buried gate which is in electrical contact with the well. Polysilicon is then deposited in the trench and doped heavily and an anneal step is used to drive impurities into the top and sidewalls of the channel region thereby creating a "wrap-around" gate region which reaches down the sidewalls of the channel region to the channel-well PN junction. This causes the bias applied to the gate terminal to also be applied to the well thereby modulating the channel transconductance with the depletion regions around both the gate-channel PN junction and the channel-well PN junction.
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