| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent a corner in a sub threshold section from being turned on due to the increase of a critical voltage in the corner by forming a gate insulating layer thicker than the other parts in a corner part of the width direction where a moat is generated. A device isolation layer(106) is formed in a semiconductor substrate in one direction and a moat is generated in a corner. A first gate insulating layer(107) is formed in the corner of the device isolation layer and the semiconductor substrate. A second gate insulating layer(109) is formed on the device isolation film including the first gate insulating layer. A gate electrode(110) is formed on the second gate insulating layer in order to cross the device isolation layer. The first gate insulating layer and the second gate insulating layer have the same thickness.
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