III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A III-nitride semiconductor light emitting device and method for manufacturing the same are provided to improve the manufacturing process speed of the semiconductor light emitting device by using a laser scribing. The III nitride semiconductor layer is epitaxial-grown on the substrate(S10). The III nitride semiconductor layer has the active layer. The active layer produces the light through the recombination of hole and electron. The laser scribing is performed on the substrate(S20). A pair of line is formed in the substrate through the laser scribing. The friction scribing is performed on the substrate(S40). A pair of line is formed through the rubbing scribing in the substrate.