METHOD FOR FABRICATING A MULTIPLE GATE INSULATED LAYER IN A SEMICONDUCTOR,申请号KR20070112197-传众专利搜索

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发明名称	METHOD FOR FABRICATING A MULTIPLE GATE INSULATED LAYER IN A SEMICONDUCTOR
摘要
申请公布号	KR100906058(B1)	申请公布日期	2009.07.03
申请号	KR20070112197	申请日期	2007.11.05
申请人		发明人
分类号	H01L21/336;H01L21/265;H01L21/31	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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