| 摘要 |
A semiconductor memory device is provided to improve data retention property by altogether including the non-volatile memory region and the volatile memory region within one chip. In case an input address(ADD) is the non-volatile data address(NDADD), the non-volatile data read/write control part(100) outputs the nonvolatile control signal(Non_con) for performing the access operation of the non-volatile memory region. In case the input address is the volatile data address(VDADD), the volatile data read/write control part(200) outputs the access operation and the volatility control signal(V_con) for performing the refresh operation of the volatile memory region. A selecting unit(300) selects one out of the nonvolatile control signal and the volatile control signal. A read/write driving part(400) performs the read/write operation or the refresh operation according to the output of the selectivity unit.
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