| 摘要 |
A contact structure of an image sensor is provided to secure the contact etch margin of the image sensor by forming the contact of the different size on the active area of the pixel region. A plurality of contacts is formed on the active region of the pixel region. Adjacent domain contacts(21,22,23a,24a) formed on the poly are formed with different size. The contact formed on the poly is more formed smaller than the contact formed in the other part except the poly. The contact formed on the poly is the non-silicide contact.
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