| 摘要 |
A method for manufacturing a semiconductor device is provided to remove a recess phenomenon of an upper edge of an STI structure by rounding the upper edger of a trench after etching for the formation of the trench of the STI(Shallow Trench Isolation). A mask layer is formed in a part to form an active region on a semiconductor substrate(10). A trench for device isolation is formed by performing the etching using the mask layer. A liner oxide layer is formed inside a trench by performing a first annealing in the front side of the semiconductor substrate. A second annealing is performed in the front side of the semiconductor substrate where the linear oxide layer is formed. An insulating layer(14c) is buried in the trench. A first pad oxide layer(11), a pad nitride layer and a second pad oxide layer are successively formed on the semiconductor substrate before forming the mask layer.
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