COMPOUND SEMICONDUCTOR SUBSTRATE USING ROUGHENED SAPPHIRE SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND HIGH-BRIGHTNESS LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF USING THE SAME

摘要

A compound semiconductor substrate using a roughened sapphire substrate and manufacturing method thereof, and a high-brightness light emitting device and manufacturing method thereof using the same are provided to prevent degradation of the luminous efficiency by forming irregular concavo-convex parts in a sapphire substrate. The compound semiconductor substrate comprises a sapphire substrate(10) and a compound semiconductor layer(30). Irregularly concavo-convex parts are formed in the surface of the sapphire substrate. The concavo-convex parts have a size of 0.1~100mum. The compound semiconductor layer is grown on the sapphire substrate. The spherical ball(20) is irregularly scattered between concavo-convex parts. The compound semiconductor layer covers the spherical balls.