发明名称 SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve processing accuracy, to reduce processing time and to suppress the diffusion of solvent components inside and outside an apparatus by efficiently sticking solvent vapor to the surface of a resist pattern without using an ultraviolet irradiation process. SOLUTION: The surface of the resist pattern R formed on the surface of a semiconductor wafer W through an exposure process and a developing process is coated with water molecules m. The solvent vapor of a water-soluble solvent (such as NMP) is supplied to the surface of the resist pattern R coated with the water molecules m, and the surface of the resist pattern R is swollen by the solvent vapor combined with the water molecules m to achieve a smoothing process. The water molecules m and the solvent s stuck to the resist pattern R on the wafer W after the smoothing process are removed by drying. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009147198(A) 申请公布日期 2009.07.02
申请号 JP20070324454 申请日期 2007.12.17
申请人 TOKYO ELECTRON LTD 发明人 INATOMI YUICHIRO
分类号 H01L21/027;G03F7/40 主分类号 H01L21/027
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