SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR BULK CRYSTAL, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR BULK CRYSTAL, SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a device, made from silicon carbide, in which the density of crystal defects which may cause the reduction of yield of a device is reduced. SOLUTION: The method of manufacturing silicon carbide semiconductor substrate 10 includes: (a) a step of preparing the silicon carbide substrate 1; (b) a step of forming a first epitaxial layer 5 on the silicon carbide substrate 1; (c) a step of specifying positions of crystal defects 4 which has occurred on the first epitaxial layer 5; (d) a step of etching the substrate so as to reduce the first epitaxial layer 5 at the specified position and to form a trench 21 on the silicon carbide substrate 1; and (e) a step of forming a second epitaxial layer 2 on the first epitaxial layer 5 and the silicon carbide substrate 1. COPYRIGHT: (C)2009,JPO&INPIT