| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature sensor circuit which operates from a low voltage, has good temperature linearity and suited to be formed on a semiconductor integrated circuit. SOLUTION: The temperature sensor circuit comprises a bipolar differential pair (Q1, Q2) driven by a constant current and having an emitter area ratio of 1:N (N>1). Two MOS transistors (M1, M2) having a transistor size ratio of K:1 (K>1) are loaded as an active load on the bipolar differential pair. A constant voltage (Vref) is applied to one of the transistors (Q1) of the bipolar differential pair. The other transistor (Q2) has a base and a collector connected together. A desired voltage is output between the bases of the two transistors (Q1, Q2) of the bipolar differential pair. Alternatively, a plural number of the temperature sensor circuits may be sequentially connected in cascade. COPYRIGHT: (C)2009,JPO&INPIT |
