| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a charge storage layer is separated under a gate electrode, and to provide a method of easily manufacturing the same. SOLUTION: The semiconductor device comprises: two groove parts 12 provided on a semiconductor substrate 10; the charge storage layer 24 composed of insulators provided on the respective side faces of the two groove parts 12 and separated at the bottom surfaces of the groove parts 12; and a bit line 14 provided on the semiconductor substrate 10 at the respective bottom surfaces of the two groove parts 12. Of the semiconductor substrate 10, a channel region 30 is formed from one side face of the two groove parts 12 through the upper surface of a projected part 13 provided between the two groove parts 12 to the other side face of the two groove parts 12. COPYRIGHT: (C)2009,JPO&INPIT |
