| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor with an organic semiconductor layer containing an organic semiconductor material with p-type semiconducting properties that prevents an increase of an OFF-state current and is superior in transistor characteristic, and to provide an electro-optical device and electronic apparatus that are superior in reliability with the transistor. SOLUTION: The thin-film transistor includes a source electrode and a drain electrode, an organic semiconductor layer, a first insulating layer, a gate electrode, and a second insulating layer. The organic semiconductor layer contains an organic semiconductor material having p-type semiconducting properties. The second insulating layer contains compounds of the following formula 1, so that electrons are fed from the second insulating layer into the organic semiconductor layer: wherein R<SP>1</SP>and R<SP>2</SP>independently represent a substituted or unsubstituted alkylene group; X<SP>1</SP>, X<SP>2</SP>, X<SP>3</SP>and X<SP>4</SP>each represent a hydrogen atom or an electron-donating group; and n represents 100 to 100,000, wherein at least one of X<SP>1</SP>, X<SP>2</SP>, X<SP>3</SP>and X<SP>4</SP>represents an electron-donating group. Thus, electrons are fed to the organic semiconductor layer from the second insulating layer. COPYRIGHT: (C)2009,JPO&INPIT |
