发明名称 |
Compound semiconductor device and method for fabricating the same |
摘要 |
The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN buffer layer 12; an n-GaN cap layer 18 formed on the n-AlGaN electron supplying layer 16; a source electrode 20 and a drain electrode 22 formed on the n-GaN cap layer 18; a gate electrode 26 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; a first protection layer 24 formed on the n-GaN cap layer 18 between the source electrode 20 and the drain electrode 22; and a second protection layer 30 buried in an opening 28 formed in the first protection layer 24 between the gate electrode 26 and the drain electrode 22 down to the n-GaN cap layer 18 and formed of an insulation film different from the first protection layer.
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申请公布号 |
US2009170249(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080318577 |
申请日期 |
2008.12.31 |
申请人 |
FUJITSU LIMITED |
发明人 |
KIKKAWA TOSHIHIDE |
分类号 |
H01L21/335;H01L29/812;H01L21/338;H01L29/20;H01L29/778 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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