发明名称 Device Manufacturing Method and Lithographic Apparatus
摘要 A device manufacturing method includes a measurement phase and an exposure phase. The measurement phase includes conditioning a radiation beam with a first beam condition, forming the patterned radiation beam by imparting the radiation beam with the first beam condition with a first pattern in its cross-section, and projecting the patterned beam onto a sensor capable of providing a sensor output signal. The exposure phase includes fast switching the conditioning of the radiation beam to a second beam condition, the second beam condition being different from the first beam condition, forming the patterned radiation beam by imparting the radiation beam with the second beam condition with a second pattern in its cross-section, the second pattern being provided by a patterning device, and projecting the patterned beam onto a target portion of the substrate.
申请公布号 US2009168039(A1) 申请公布日期 2009.07.02
申请号 US20080345105 申请日期 2008.12.29
申请人 ASML NETHERLANDS B.V. 发明人 KOK HAICO VICTOR;BASELMANS JOHANNES JACOBUS MATHEUS;VAN DE KERKHOF MARCUS ADRIANUS
分类号 G03B27/42 主分类号 G03B27/42
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