| 摘要 |
Compositions and methods for enabling sputter deposition from targets containing high vapor pressure compounds are describe. An element or compound with a high vapor pressure may be combined with an element or compound with a lower vapor pressure to form a low vapor pressure compound. An alloy sputtering target may then be formed by combining the low vapor pressure compound with a metal that serves as the main material of the sputter target. In some instances, the low vapor pressure compound may comprise MgB2, MgB4, or MgB7. Additionally, the metal that serves as the main material of the sputter target may comprise copper. As a result, the alloy target may comprise Cu(MgB2), Cu(MgB4), or Cu(MgB7). Other embodiments are also described.
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