SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICEDISPOSITIF À SEMI-CONDUCTEURRS ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEURS

摘要

Provided are the constitution of a lateral transistor suited for hybridization (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor and its manufacturing method. A semiconductor device comprises a hybrid of an HCBT (100) and a CMOS transistor (200). The HCBT (100) has an open region (21) opened by etching an element isolating oxide film (6) surrounding an n-hill layer (11), an emitter electrode (31A) and a collector electrode (31B) each of which is formed in the open region (21) and is composed of a polysilicon film having a thickness leading to exposing the n-hill layer (11) exposed by the etching of the element isolating oxide film, and an ultrathin oxide film (24) covering at least a part of the n-hill layer (11). The ultrathin film (24) functions as a protective film for protecting the n-hill layer (11) from being etched when the polysilicon film is etched to form the emitter electrode (31A) and the collector electrode (31B).