NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE, NITRIDE SEMICONDUCTOR LASER ELEMENT, METHODS FOR MANUFACTURING SUCH DIODE AND ELEMENT, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER

摘要

Provided is a nitride semiconductor light emitting diode which suppresses making manufacturing process complicated, improves efficiency of extracting light from a light emitting layer, and also improves planarity of a semiconductor layer. A nitride semiconductor light emitting diode (30) is provided with a substrate (11) having a recessed section (21) formed on the main surface; and a nitride semiconductor layer (12) on the main surface. The nitride semiconductor layer includes a first side surface (12a) composed of a (000-1) face, which is provided with a light emitting layer (14) and formed on the main surface by having one inner surface (21a) of the recessed section as an origin, and a second side surface (12b), which is formed in a region on the opposite side to the first side surface to sandwich the light emitting layer, by having the other inner side surface (21b) of the recessed section as an origin.