| 摘要 |
A manufacturing method of a semiconductor device is provided to effectively form a metal line by plating copper after removing a copper oxide film. A copper(20) is plated on a wafer by an electro chemical plating method. A copper oxide film is removed in case the copper oxide film is formed on the copper. A copper is again plated on the copper in which the copper oxide film is removed. In a process for removing the copper oxide film, the wafer is prepared inside a bath in which a sulfuric acid solution of 5~30% concentration is stored for 1~15 second. In a process for removing the copper oxide film, a current is applied into an opposite direction of a current direction applied in a step for plating the copper. In the copper plating, a current of 0.5~22A is applied from a copper electrode inside the bath to the wafer.
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