| 摘要 |
A semiconductor manufacturing device and a method thereof are provided to improve a process production rate by preventing by-product inside a chamber through uniform deposition with three targets. In a target part(110), at least three targets(111) are positioned in one side region separated from a wafer. Process gas ports(112,122,132) are coupled in the targets. A process gas is sprayed. A spray part(120) is mounted in a region facing to the target part, and sprays the process gas while the process gas ports are rotated. A purge part(130) is mounted in the other region separated from the wafer, and removes a residual process gas of the spray part. A deposition part(140) deposits a target material separated while the process gas sprayed from the spray part and the purge part is collided on the target part. The target part, the spray part, the purge part, and the deposition part are mounted inside a chamber(150). When a thin film is deposited on the wafer, a sputtering process is performed in the chamber.
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