| 摘要 |
A fabrication method of wafer for measuring the epi layer thickness is provided to omit the process of measuring the oxide layer thickness and the process of removing the oxide layer. The impurity is injected into a wafer with the ion(202). The wafer is annealed by the RTP(Rapid Thermal Process)(206). The RTP is performed under the vacuum mode or the oxidation blocking mood. The ion implantation is performed in the energy range of 50~60keV and the dose range of 2~3E15 unit/cm^2. The oxidation blocking mood is the gaseous mode including one or greater among the argon or the nitrogen.
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