| 摘要 |
PROBLEM TO BE SOLVED: To provide a cross point memory device of which the capacity increase of a nonvolatile memory is attained, which uses a material having such a property that electrical resistance is changed by an external influence (electric pulse, in particular). SOLUTION: A bit region corresponding to the cross point of a lower electrode and an upper electrode is a part of an active layer arranged between a lower electrode and an upper electrode which are arrayed so as to intersect each other. The active layer is formed of a material having resistance to be changed in response to an electric signal. The electric signal passing between the lower electrode and the upper electrode is passed through a bit region. In the bit region, resistivity is changed in response to the electric signal. COPYRIGHT: (C)2009,JPO&INPIT |
