发明名称 SUBSTRATE-TREATING DEVICE AND SUBSTRATE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate-treating device and a substrate treatment method capable of unifying treatment to a substrate to be treated and suppressing readhesion of a treatment liquid to a wafer and the disturbance of an air current near the edge of a wafer. SOLUTION: The substrate W to be treated supported by a support section 20 is rotated about an axis which extends substantially in a vertical direction as a center. Gas is injected downward toward the upper surface of the substrate W, to be treated on the support section 20 and is sucked upward from an upper region of the substrate W to be treated, thus pressing the substrate W to be treated on the support section 20 toward the support section 20. While the substrate W to be treated is being rotated and being pressed toward the support section 20, a treatment liquid, such as an etching liquid and a cleaning liquid, is supplied to the substrate W to be treated. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009147146(A) 申请公布日期 2009.07.02
申请号 JP20070323469 申请日期 2007.12.14
申请人 TOKYO ELECTRON LTD 发明人 TOJIMA JIRO;KANEKO SATOSHI;AMANO YOSHIFUMI
分类号 H01L21/304;H01L21/306 主分类号 H01L21/304
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