| 摘要 |
PROBLEM TO BE SOLVED: To highly precisely manage an ion implantation condition in an ion implantation process in silicon wafer manufacturing processes and device manufacturing processes using ion implantation. SOLUTION: A managing method of the ion implantation condition in the ion implantation process is characterized by management of the ion implantation condition by comparing diffraction intensity in an angle range on a low-angle side (high-angle side) of a rocking curve of a silicon wafer having an ion implantation layer with a reference wafer to previously find a correlation between a variation amount or variation rate of the diffraction intensity and the ion implantation condition, comparing diffraction intensity in an angle range of a low-angle side (high-angle side) of a rocking curve of a wafer for measurement into which an element has been ion-implanted in the ion implantation process of the product manufacturing process with a reference wafer to find a variation amount or variation rate of the diffraction intensity, and evaluating the ion implantation condition based on the found correlation. COPYRIGHT: (C)2009,JPO&INPIT
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