| 摘要 |
PROBLEM TO BE SOLVED: To suppress cracking of an insulating film covering gate wiring in a trench gate type semiconductor device having a source or emitter terminal connected onto a source electrode or emitter electrode through solder. SOLUTION: A gate electrode 17 is disposed in a gate trench 15 formed on a silicon substrate 10, a top surface of the gate electrode 17 is coated with an interlayer dielectric 20, and the source electrodes 21 are disposed on the top surface of the interlayer dielectric 20 and above a top surface of the silicon substrate 10. Aluminum gate wiring 32 is disposed in a groove 30 for gate wiring formed in the silicon substrate 10 from its top surface side, electrically connected to the polysilicon gate electrode 17, and coated with a passivation film 33. The source terminal 60 is disposed on the source electrode 21 and connected to the source electrode 21 through solder 61. The aluminum gate wiring 32 is formed having its top surface below a top surface of the source electrode 21. COPYRIGHT: (C)2009,JPO&INPIT
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