发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.
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申请公布号 |
US2009170248(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080341488 |
申请日期 |
2008.12.22 |
申请人 |
KIM HYOUNG JUNE;SHIN DONG HOON;LEE SU KYOUNG;LEE JUNG MIN;PARK WANG JUN;RYU SUNG RYOUNG;KIM HOON |
发明人 |
KIM HYOUNG JUNE;SHIN DONG HOON;LEE SU KYOUNG;LEE JUNG MIN;PARK WANG JUN;RYU SUNG RYOUNG;KIM HOON |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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