发明名称 METHOD FOR MANUFACTURING IAMGE SENSOR
摘要 In a method for manufacturing an image sensor, an interlayer insulating layer including a metal line is formed on a semiconductor substrate. A lower electrode layer is formed on the metal line such that the lower electrode is connected with the metal line. A photoresist pattern corresponding to the metal line is formed on the lower electrode layer. The lower electrode layer is etched using the photoresist pattern to form a lower electrode connected with the metal line. The photoresist pattern is stripped using a solvent containing fluorine.
申请公布号 US2009170232(A1) 申请公布日期 2009.07.02
申请号 US20080344494 申请日期 2008.12.27
申请人 YOON JOON-KU;KIM SUNG-HYOK 发明人 YOON JOON-KU;KIM SUNG-HYOK
分类号 H01L31/18;H01L21/00;H01L21/027 主分类号 H01L31/18
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