发明名称 |
METHOD FOR MANUFACTURING IAMGE SENSOR |
摘要 |
In a method for manufacturing an image sensor, an interlayer insulating layer including a metal line is formed on a semiconductor substrate. A lower electrode layer is formed on the metal line such that the lower electrode is connected with the metal line. A photoresist pattern corresponding to the metal line is formed on the lower electrode layer. The lower electrode layer is etched using the photoresist pattern to form a lower electrode connected with the metal line. The photoresist pattern is stripped using a solvent containing fluorine.
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申请公布号 |
US2009170232(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080344494 |
申请日期 |
2008.12.27 |
申请人 |
YOON JOON-KU;KIM SUNG-HYOK |
发明人 |
YOON JOON-KU;KIM SUNG-HYOK |
分类号 |
H01L31/18;H01L21/00;H01L21/027 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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