| 摘要 |
Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a method may include forming a semiconductor substrate including a pixel part and a peripheral part, forming an interlayer dielectric film including a metal wire on and/or over the semiconductor substrate, forming photo diode patterns on and/or over the interlayer dielectric film and connected to the metal wire in the pixel part, forming a device isolation dielectric layer on and/or over the interlayer dielectric film including the photo diode patterns, forming a first via hole on and/or over the device isolation dielectric layer to partially expose the photo diode patterns, and forming a second via hole on and/or over the device isolation dielectric layer to expose the metal wire in the peripheral part. According to embodiments, vertical integration of transistor circuitry and a photo diode may be achieved.
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