| 摘要 |
A flash memory device and a method for manufacturing the device includes forming a device isolation layer in a semiconductor substrate defining active regions, forming a control gate layer over the entire upper surface of the semiconductor substrate, forming a gate mask over the control gate layer, the gate mask being used to provide gate lines on the device isolation layer with grooves at positions opposite each other, and forming the grooves by etching the control gate layer using the gate mask as an etching mask, and forming the gate lines on the device isolation layer. A common source line can be more easily defined during a SAS process including photography and etching processes, and a reduced source resistance can be accomplished, resulting in an improvement in characteristics of the flash memory device.
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