| 发明名称 |
Composition for Forming Gate Insulating Layer of Organic Thin-Film Transistor and Organic Thin Film Transistor Using the Same |
| 摘要 |
The present invention relates to a composition for forming a gate insulating layer of an organic thin film transistor comprising polyarylate, and an organic thin film transistor comprising a gate insulating layer, which is formed using the composition, in contact with an organic semiconductor channel.
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| 申请公布号 |
US2009166613(A1) |
申请公布日期 |
2009.07.02 |
| 申请号 |
US20070226955 |
申请日期 |
2007.05.03 |
| 申请人 |
LEE JAE-MIN;CHOI HYEON;LEE MIN-JEONG;KIM HEE-JUNG;PARK YOUNG-WHAN;KIM DONG-RYUL |
发明人 |
LEE JAE-MIN;CHOI HYEON;LEE MIN-JEONG;KIM HEE-JUNG;PARK YOUNG-WHAN;KIM DONG-RYUL |
| 分类号 |
H01L29/786;C08G63/688;H01L51/05 |
主分类号 |
H01L29/786 |
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