发明名称 |
FLASH MEMORY DEVICE HAVING DUMMY CELL |
摘要 |
A nonvolatile semiconductor memory device includes a string selection transistor coupled to a bit line. The device also includes a plurality of memory cells coupled in series to the string selection transistor, wherein at least one of the memory cells is configured to be in a programmed state during an erase procedure of the plurality of memory cells.
|
申请公布号 |
US2009168526(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20090395730 |
申请日期 |
2009.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANG-GU |
分类号 |
G11C16/04;G11C16/06;G11C16/16 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|