发明名称 FLASH MEMORY DEVICE HAVING DUMMY CELL
摘要 A nonvolatile semiconductor memory device includes a string selection transistor coupled to a bit line. The device also includes a plurality of memory cells coupled in series to the string selection transistor, wherein at least one of the memory cells is configured to be in a programmed state during an erase procedure of the plurality of memory cells.
申请公布号 US2009168526(A1) 申请公布日期 2009.07.02
申请号 US20090395730 申请日期 2009.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SANG-GU
分类号 G11C16/04;G11C16/06;G11C16/16 主分类号 G11C16/04
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