SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided with a lower barrier layer (12) composed of a lattice-relaxed AlxGa1-xN (0=x=1) layer, and a channel layer (13), which is laminated on the lower barrier layer (12) with a bandgap smaller than that of the lower barrier layer (12) and composed of an InyGa1-yN (0=y=1) layer having compression distortion. On the channel layer (13), a gate electrode (1G) is formed with an insulating film (15) formed therebetween, and a source electrode (1S) and a drain electrode (1D) are also formed on the channel layer (13) as ohmic electrodes. The insulating film (15) is composed of a polycrystalline or an amorphous material.