| 摘要 |
<p>A method of manufacturing a photomask is provided to improve a process margin and increase the focus margin of the photo lithography. The method of manufacturing a photomask having the assist pattern comprises a formation step of main pattern(111) and a formation step of resist pattern(131). The formation step of the main pattern is performed in order to form main patterns on the substrate. The formation step of the resist patterns is performed in order to form resist patterns on main patterns. The resist patterns are formed in order to expose main patterns in the first interval. The method of manufacturing the photomask also includes the reduction step of the resist patterns and a formation step of the open part.</p> |
