| 摘要 |
<p>A semiconductor device and photomask are provided to prevent the opening failure of the contact hole and to lower the constant resistance of the contact. The semiconductor device comprises a semiconductor substrate(SB), an impurity region(PIR), and a transistor(LT1) and an insulating layer(LN, II1). The impurity region is arranged in the major surface of the semiconductor substrate. The transistor is arranged in the semiconductor substrate. The transistor has the insulated gate type field effect. The transistor has a gate electrode layer. The insulating layer is arranged on the transistor. The insulating layer has a shared contact hole(SC2) exposing the gate electrode and the impurity region.</p> |
