| 摘要 |
A metal line of a semiconductor device and a manufacturing method thereof are provided to reduce parasitic capacitance between metal lines by forming an air layer on an insulation film between the metal lines. An interlayer insulation film(12) is formed on a semiconductor substrate(11), and has a plurality of contact holes. A plurality of contact plugs(14) is formed inside the contact holes. A plurality of first metal lines(15) is formed on the interlayer insulation film, and is connected to the contact plugs. A plurality of second metal lines(17) is formed on the first metal lines, is connected to the first metal lines, and has a width wider than the first metal lines. Insulation films(16,20) are formed between the second metal lines, and are formed between the first metal lines. A space(19) is formed between the first metal line and the insulation film.
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